Raumzeitliche Dynamik optisch angeregter Elektron-Loch-Plasmen in Galliumarsenid

Spatio-temporal kinetics of optically generated electron-hole plasmas in GaAs

von Ralf Ziebold
Dissertation
Datum der mündl. Prüfung:2000-10-25
Erschienen:2001-05-04
Betreuer:Prof. Dr. Rainer G. Ulbrich
Gutachter:Prof. Dr. Rainer G. Ulbrich
Gutachter:Prof. Dr. Wolfgang Felsch
Zum Verlinken/Zitieren: http://dx.doi.org/10.53846/goediss-2759

 

 

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Englisch

Applying pump and probe differential reflection and transmission of femtosecond light pulses for either co- or counterpropagating pump and probe geometries, a direct time of flight method with submicrometer resolution is presented. With this technique we study the density-dependent transport of photogenerated carrier plasmas perpendicular to the surface of GaAs samples surface for delay times 20 ps< t < 1 ns. As an additional parameter we vary the lattice temperature in the range of 4 K < TL < 300 K. At a lattice temperature of TL = 300K and a pump fluence of 800 mJ/cm2 a relatively sharp charge-carrier front was observed, with high velocities of 14 x 10 5 cm/s at a delay time t = 20 ps, decreasing as v ~ t 2/3 to 2 x 105 cm/s at t = 350 ps. The arrival times t of the carriers at a fixed sample thickness depend on the fluence of the pump pulses F such as t ~ 1/F 0.45. At low lattice temperatures TL we found a similar time dependence of the expansion velocities v, but here a faster transport with a stronger density dependence is observed. The experimental results are discussed in the framework of diffusive transport with a strongly density- and carrier temperature -dependent diffusivity D. The data can be described consistently with the assumption of Fermi pressure as the dominating driving force for plasma expansion.
Keywords: electron-hole plasma expansion; GaAs; transport; Fermi pressure; ultrafast; femtosecond; semiconductor
Schlagwörter: Elektron-Loch-Plasma Expansion; GaAs; Transport; Fermidruck; ultraschnell; femtosekunden; Halbleiter
 
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