Show simple item record

Raumzeitliche Dynamik optisch angeregter Elektron-Loch-Plasmen in Galliumarsenid

dc.contributor.advisorUlbrich, Rainer G. Prof. Dr.de
dc.contributor.authorZiebold, Ralfde
dc.date.accessioned2001-05-04T15:28:52Zde
dc.date.accessioned2013-01-18T13:35:17Zde
dc.date.available2013-01-30T23:51:08Zde
dc.date.issued2001-05-04de
dc.identifier.urihttp://hdl.handle.net/11858/00-1735-0000-0006-B41C-Cde
dc.identifier.urihttp://dx.doi.org/10.53846/goediss-2759
dc.format.mimetypeContentType:application/pdf Size:2008de
dc.language.isogerde
dc.rights.urihttp://webdoc.sub.gwdg.de/diss/copyrdiss.htmde
dc.titleRaumzeitliche Dynamik optisch angeregter Elektron-Loch-Plasmen in Galliumarsenidde
dc.typedoctoralThesisde
dc.title.translatedSpatio-temporal kinetics of optically generated electron-hole plasmas in GaAsde
dc.contributor.refereeUlbrich, Rainer G. Prof. Dr.de
dc.date.examination2000-10-25de
dc.subject.dnb530 Physikde
dc.description.abstractengApplying pump and probe differential reflection and transmission of femtosecond light pulses for either co- or counterpropagating pump and probe geometries, a direct time of flight method with submicrometer resolution is presented. With this technique we study the density-dependent transport of photogenerated carrier plasmas perpendicular to the surface of GaAs samples surface for delay times 20 ps< t < 1 ns. As an additional parameter we vary the lattice temperature in the range of 4 K < TL < 300 K. At a lattice temperature of TL = 300K and a pump fluence of 800 mJ/cm2 a relatively sharp charge-carrier front was observed, with high velocities of 14 x 10 5 cm/s at a delay time t = 20 ps, decreasing as v ~ t 2/3 to 2 x 105 cm/s at t = 350 ps. The arrival times t of the carriers at a fixed sample thickness depend on the fluence of the pump pulses F such as t ~ 1/F 0.45. At low lattice temperatures TL we found a similar time dependence of the expansion velocities v, but here a faster transport with a stronger density dependence is observed. The experimental results are discussed in the framework of diffusive transport with a strongly density- and carrier temperature -dependent diffusivity D. The data can be described consistently with the assumption of Fermi pressure as the dominating driving force for plasma expansion.de
dc.contributor.coRefereeFelsch, Wolfgang Prof. Dr.de
dc.subject.topicMathematics and Computer Sciencede
dc.subject.gerElektron-Loch-Plasma Expansionde
dc.subject.gerGaAsde
dc.subject.gerTransportde
dc.subject.gerFermidruckde
dc.subject.gerultraschnellde
dc.subject.gerfemtosekundende
dc.subject.gerHalbleiterde
dc.subject.engelectron-hole plasma expansionde
dc.subject.engGaAsde
dc.subject.engtransportde
dc.subject.engFermi pressurede
dc.subject.engultrafastde
dc.subject.engfemtosecondde
dc.subject.engsemiconductorde
dc.subject.bk33.38 33.28 33.72de
dc.identifier.urnurn:nbn:de:gbv:7-webdoc-1104-6de
dc.identifier.purlwebdoc-1104de
dc.affiliation.instituteFakultät für Physikde
dc.subject.gokfullRVQ 450: Transporteigenschaften {Physik: Halbleiter: Thermische Eigenschaften}de
dc.identifier.ppn330827766


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record