dc.contributor.advisor | Ulbrich, Rainer G. Prof. Dr. | de |
dc.contributor.author | Ziebold, Ralf | de |
dc.date.accessioned | 2001-05-04T15:28:52Z | de |
dc.date.accessioned | 2013-01-18T13:35:17Z | de |
dc.date.available | 2013-01-30T23:51:08Z | de |
dc.date.issued | 2001-05-04 | de |
dc.identifier.uri | http://hdl.handle.net/11858/00-1735-0000-0006-B41C-C | de |
dc.identifier.uri | http://dx.doi.org/10.53846/goediss-2759 | |
dc.format.mimetype | ContentType:application/pdf Size:2008 | de |
dc.language.iso | ger | de |
dc.rights.uri | http://webdoc.sub.gwdg.de/diss/copyrdiss.htm | de |
dc.title | Raumzeitliche Dynamik optisch angeregter Elektron-Loch-Plasmen in Galliumarsenid | de |
dc.type | doctoralThesis | de |
dc.title.translated | Spatio-temporal kinetics of optically generated electron-hole plasmas in GaAs | de |
dc.contributor.referee | Ulbrich, Rainer G. Prof. Dr. | de |
dc.date.examination | 2000-10-25 | de |
dc.subject.dnb | 530 Physik | de |
dc.description.abstracteng | Applying pump and probe differential reflection and transmission of femtosecond light pulses for either co- or counterpropagating pump and probe geometries, a direct time of flight method with submicrometer resolution is presented. With this technique we study the density-dependent transport of photogenerated carrier plasmas perpendicular to the surface of GaAs samples surface for delay times 20 ps< t < 1 ns. As an additional parameter we vary the lattice temperature in the range of 4 K < TL < 300 K. At a lattice temperature of TL = 300K and a pump fluence of 800 mJ/cm2 a relatively sharp charge-carrier front was observed, with high velocities of 14 x 10 5 cm/s at a delay time t = 20 ps, decreasing as v ~ t 2/3 to 2 x 105 cm/s at t = 350 ps. The arrival times t of the carriers at a fixed sample thickness depend on the fluence of the pump pulses F such as t ~ 1/F 0.45. At low lattice temperatures TL we found a similar time dependence of the expansion velocities v, but here a faster transport with a stronger density dependence is observed. The experimental results are discussed in the framework of diffusive transport with a strongly density- and carrier temperature -dependent diffusivity D. The data can be described consistently with the assumption of Fermi pressure as the dominating driving force for plasma expansion. | de |
dc.contributor.coReferee | Felsch, Wolfgang Prof. Dr. | de |
dc.subject.topic | Mathematics and Computer Science | de |
dc.subject.ger | Elektron-Loch-Plasma Expansion | de |
dc.subject.ger | GaAs | de |
dc.subject.ger | Transport | de |
dc.subject.ger | Fermidruck | de |
dc.subject.ger | ultraschnell | de |
dc.subject.ger | femtosekunden | de |
dc.subject.ger | Halbleiter | de |
dc.subject.eng | electron-hole plasma expansion | de |
dc.subject.eng | GaAs | de |
dc.subject.eng | transport | de |
dc.subject.eng | Fermi pressure | de |
dc.subject.eng | ultrafast | de |
dc.subject.eng | femtosecond | de |
dc.subject.eng | semiconductor | de |
dc.subject.bk | 33.38 33.28 33.72 | de |
dc.identifier.urn | urn:nbn:de:gbv:7-webdoc-1104-6 | de |
dc.identifier.purl | webdoc-1104 | de |
dc.affiliation.institute | Fakultät für Physik | de |
dc.subject.gokfull | RVQ 450: Transporteigenschaften {Physik: Halbleiter: Thermische Eigenschaften} | de |
dc.identifier.ppn | 330827766 | |