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Charge Density Distribution in Low-Valent Tetrels

dc.contributor.advisorStalke, Dietmar Prof. Dr.de
dc.contributor.authorKratzert, Danielde
dc.date.accessioned2013-05-22T09:24:31Zde
dc.date.available2013-05-22T09:24:31Zde
dc.date.issued2013-05-22de
dc.identifier.urihttp://hdl.handle.net/11858/00-1735-0000-001C-63A3-Bde
dc.identifier.urihttp://dx.doi.org/10.53846/goediss-3798
dc.identifier.urihttp://dx.doi.org/10.53846/goediss-3798
dc.language.isoengde
dc.publisherNiedersächsische Staats- und Universitätsbibliothek Göttingende
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject.ddc540de
dc.titleCharge Density Distribution in Low-Valent Tetrelsde
dc.typedoctoralThesisde
dc.contributor.refereeStalke, Dietmar Prof. Dr.de
dc.date.examination2013-04-09de
dc.description.abstractengThe scope of this work was the analysis of the electron density of low valent tetreles. For silicon and carbon-containing compounds. Especially low valent silicon compounds are of great interest because their synthesis has always been a challenging target. Since the chemistry of aromatic systems with low-valent silicon is a relatively new field, obtaining new information on their fundamental properties is likely to help with the understanding their reactivity and synthetic access. The investigation of low-valent silicon compounds in terms of experimental electron density analysis has always been difficult. Low-valent silicon compounds are only stable when they are stored at low temperature or kinetically stabilized with sterically demanding ligands. However, such ligands often do not pack well while forming single crystals. Instead, they are almost always disordered and the analysis of the electron density in combination with disorder is difficult. The multipole refinement with X-ray data of small molecules up to about thirty atoms has become a quasi-routine method over the last years. Most common refinement programs focus on this, unfortunately. Much less attention has been paid to the multipole refinement of larger molecules and disorder treatment. The aim of this study was the development of the nece¬ssary procedures for the treatment of disorder and perform a complete electron density analysis even if major parts of the molecule were disordered. The Invariom approach was a key tool to model the disordered parts of the structures with aspherical density and also allowed to refine certain parts of a molecule freely.de
dc.contributor.coRefereeSheldrick, George M. Prof. Dr.de
dc.contributor.thirdRefereeRoesky, Herbert W. Prof. Dr. Dr. h.c.de
dc.contributor.thirdRefereeSiewert, Inke Dr.de
dc.contributor.thirdRefereeSowa, Heidrun Dr.de
dc.contributor.thirdRefereeWaitz, Thomas Prof. Dr.de
dc.subject.gerLow valent Siliconde
dc.subject.gerSiliconde
dc.subject.gerCharge densityde
dc.subject.gerelectron densityde
dc.subject.gerexperimental charge densityde
dc.subject.gerXD2006de
dc.subject.gerAIMde
dc.subject.gerdisorderde
dc.subject.gerX-rayde
dc.subject.engLow valent Siliconde
dc.subject.engSiliconde
dc.subject.engCharge densityde
dc.subject.engelectron densityde
dc.subject.engexperimental charge densityde
dc.subject.engXD2006de
dc.subject.engAIMde
dc.subject.engdisorderde
dc.subject.engX-rayde
dc.identifier.urnurn:nbn:de:gbv:7-11858/00-1735-0000-001C-63A3-B-6de
dc.affiliation.instituteFakultät für Chemiede
dc.subject.gokfullChemie  (PPN62138352X)de
dc.identifier.ppn746943660de


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