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Spin injection in MnGa/ GaN heterostructures

dc.contributor.advisorRizzi, Angela Prof. Dr.
dc.contributor.authorZube, Christian
dc.titleSpin injection in MnGa/ GaN heterostructuresde
dc.contributor.refereeRizzi, Angela Prof. Dr.
dc.subject.gokPhysik (PPN621336750)de
dc.description.abstractengDue to the perfect epitaxial match of ferromagnetic MnGa on GaN and spin transport properties of GaN (long spin life time), the hybride MnGa/GaN is a promising material for future spintronic devices to examine. The samples are grown by Molecular Beam Epitaxy (MBE) on GaN tem- plates or on a pre-grown LED structure. The growth process has been monitored in-situ with reflexion high energy electron diffraction (RHEED) to investigate the epitaxial match between ferromagnet and semiconductor. The deduced epitaxial relation has been verified by transmission electron mi- croscopy (TEM). Furthermore, structural and magnetic properties of MnGa/ GaN hybrides has been assessed by x-ray diffraction (XRD), superconducting quantuum interference device (SQUID) and vibrating sample magnetometry (VSM). For the determination of the governing transport process across the MnGa/ GaN interface, transmission line features have been structured in a clean- room environment. The characterization has been done in a continuous flow cryostat with DC and AC measurement techniques. The best conditions for efficient spin injection have been found. Two different spin detection mechanisms have been employed. An all elec- trical approach which includes the preparation of sub µm structures with electron beam lithography, and an optical setup based on the analysis of the emitted light of a LED with MnGa
dc.contributor.coRefereeMünzenberg, Markus Prof. Dr.
dc.subject.engMBE, spintronic, GaN, LEDde
dc.affiliation.instituteFakultät für Physikde

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