| dc.contributor.advisor | Rizzi, Angela Prof. Dr. | |
| dc.contributor.author | Zube, Christian | |
| dc.date.accessioned | 2016-01-12T09:47:00Z | |
| dc.date.available | 2016-01-12T09:47:00Z | |
| dc.date.issued | 2016-01-12 | |
| dc.identifier.uri | http://hdl.handle.net/11858/00-1735-0000-0028-868B-4 | |
| dc.identifier.uri | http://dx.doi.org/10.53846/goediss-5457 | |
| dc.language.iso | eng | de |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | |
| dc.subject.ddc | 530 | de |
| dc.title | Spin injection in MnGa/ GaN heterostructures | de |
| dc.type | doctoralThesis | de |
| dc.contributor.referee | Rizzi, Angela Prof. Dr. | |
| dc.date.examination | 2015-11-13 | |
| dc.subject.gok | Physik (PPN621336750) | de |
| dc.description.abstracteng | Due to the perfect epitaxial match of ferromagnetic MnGa on GaN and spin
transport properties of GaN (long spin life time), the hybride MnGa/GaN
is a promising material for future spintronic devices to examine.
The samples are grown by Molecular Beam Epitaxy (MBE) on GaN tem-
plates or on a pre-grown LED structure. The growth process has been
monitored in-situ with reflexion high energy electron diffraction (RHEED)
to investigate the epitaxial match between ferromagnet and semiconductor.
The deduced epitaxial relation has been verified by transmission electron mi-
croscopy (TEM). Furthermore, structural and magnetic properties of MnGa/
GaN hybrides has been assessed by x-ray diffraction (XRD), superconducting
quantuum interference device (SQUID) and vibrating sample magnetometry
(VSM).
For the determination of the governing transport process across the MnGa/
GaN interface, transmission line features have been structured in a clean-
room environment. The characterization has been done in a continuous flow
cryostat with DC and AC measurement techniques. The best conditions for
efficient spin injection have been found.
Two different spin detection mechanisms have been employed. An all elec-
trical approach which includes the preparation of sub µm structures with
electron beam lithography, and an optical setup based on the analysis of the
emitted light of a LED with MnGa electrodes. | de |
| dc.contributor.coReferee | Münzenberg, Markus Prof. Dr. | |
| dc.subject.eng | MBE, spintronic, GaN, LED | de |
| dc.identifier.urn | urn:nbn:de:gbv:7-11858/00-1735-0000-0028-868B-4-7 | |
| dc.affiliation.institute | Fakultät für Physik | de |
| dc.identifier.ppn | 845626361 | |