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Spin injection in MnGa/ GaN heterostructures

dc.contributor.advisorRizzi, Angela Prof. Dr.
dc.contributor.authorZube, Christian
dc.date.accessioned2016-01-12T09:47:00Z
dc.date.available2016-01-12T09:47:00Z
dc.date.issued2016-01-12
dc.identifier.urihttp://hdl.handle.net/11858/00-1735-0000-0028-868B-4
dc.identifier.urihttp://dx.doi.org/10.53846/goediss-5457
dc.language.isoengde
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject.ddc530de
dc.titleSpin injection in MnGa/ GaN heterostructuresde
dc.typedoctoralThesisde
dc.contributor.refereeRizzi, Angela Prof. Dr.
dc.date.examination2015-11-13
dc.subject.gokPhysik (PPN621336750)de
dc.description.abstractengDue to the perfect epitaxial match of ferromagnetic MnGa on GaN and spin transport properties of GaN (long spin life time), the hybride MnGa/GaN is a promising material for future spintronic devices to examine. The samples are grown by Molecular Beam Epitaxy (MBE) on GaN tem- plates or on a pre-grown LED structure. The growth process has been monitored in-situ with reflexion high energy electron diffraction (RHEED) to investigate the epitaxial match between ferromagnet and semiconductor. The deduced epitaxial relation has been verified by transmission electron mi- croscopy (TEM). Furthermore, structural and magnetic properties of MnGa/ GaN hybrides has been assessed by x-ray diffraction (XRD), superconducting quantuum interference device (SQUID) and vibrating sample magnetometry (VSM). For the determination of the governing transport process across the MnGa/ GaN interface, transmission line features have been structured in a clean- room environment. The characterization has been done in a continuous flow cryostat with DC and AC measurement techniques. The best conditions for efficient spin injection have been found. Two different spin detection mechanisms have been employed. An all elec- trical approach which includes the preparation of sub µm structures with electron beam lithography, and an optical setup based on the analysis of the emitted light of a LED with MnGa electrodes.de
dc.contributor.coRefereeMünzenberg, Markus Prof. Dr.
dc.subject.engMBE, spintronic, GaN, LEDde
dc.identifier.urnurn:nbn:de:gbv:7-11858/00-1735-0000-0028-868B-4-7
dc.affiliation.instituteFakultät für Physikde
dc.identifier.ppn845626361


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