Transmission electron microspy studies of ion migration in resistive switching platinum-manganite heterostructures

dc.contributor.advisor	Jooss, Christian Prof. Dr.
dc.contributor.author	Kramer, Thilo
dc.date.accessioned	2018-04-16T08:17:36Z
dc.date.available	2018-04-16T08:17:36Z
dc.date.issued	2018-04-16
dc.identifier.uri	http://hdl.handle.net/11858/00-1735-0000-002E-E3BC-5
dc.identifier.uri	http://dx.doi.org/10.53846/goediss-6830
dc.language.iso	eng	de
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject.ddc	530	de
dc.title	Transmission electron microspy studies of ion migration in resistive switching platinum-manganite heterostructures	de
dc.type	cumulativeThesis	de
dc.contributor.referee	Jooß, Christian Prof. Dr.
dc.date.examination	2018-02-06
dc.subject.gok	Physik (PPN621336750)	de
dc.description.abstracteng	Non-volatile resistance change under electric stimulation in many metal-oxides is a promising path to next generation memory devices. However, the underlying mechanisms are still not fully understood. In this study different approaches are described to shed light on this topic including a novel in situ TEM method.	de
dc.contributor.coReferee	Seibt, Michael Prof. Dr.
dc.subject.eng	Resistive Switching	de
dc.subject.eng	Oxygen vacancies	de
dc.subject.eng	EELS	de
dc.subject.eng	Diffusion	de
dc.identifier.urn	urn:nbn:de:gbv:7-11858/00-1735-0000-002E-E3BC-5-4
dc.affiliation.institute	Fakultät für Physik	de
dc.identifier.ppn	101876125X

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