Ultra-low Energy Ion Implantation into Graphene

Junge, Felix

dc.contributor.advisor	Hofsäss, Hans Christian Prof. Dr.
dc.contributor.author	Junge, Felix
dc.date.accessioned	2023-11-03T18:14:52Z
dc.date.available	2023-11-10T00:50:11Z
dc.date.issued	2023-11-03
dc.identifier.uri	http://resolver.sub.uni-goettingen.de/purl?ediss-11858/14954
dc.identifier.uri	http://dx.doi.org/10.53846/goediss-10175
dc.format.extent	164	de
dc.language.iso	eng	de
dc.rights.uri	http://creativecommons.org/licenses/by/4.0/
dc.subject.ddc	530	de
dc.title	Ultra-low Energy Ion Implantation into Graphene	de
dc.type	doctoralThesis	de
dc.contributor.referee	Hofsäss, Hans Christian Prof. Dr.
dc.date.examination	2023-10-27	de
dc.subject.gok	Physik (PPN621336750)	de
dc.description.abstracteng	This thesis explores the advancement of ultra-low energy (ULE) ion implantation as a method for precisely doping of graphene, with the aim of tailoring its properties for specific applications. The incorporation of impurity atoms into the crystalline structure of 2D materials is crucial to achieving desired functionalities. Traditional ion implantation techniques have proven inadequate for doping 2D materials, necessitating the development of ULE ion implantation techniques. To address this challenge, a novel ion source that combines plasma and sputtering sources is introduced, thereby expanding the range of implantation elements that can be utilized. Additionally, the utilization of electrostatic masks for lateral selective implantation is discussed. A newly developed simulation program, IMINTDYN, is employed to gain a comprehensive understanding of the implantation process using ultra-low energies. Experimental implantations are thoroughly analyzed using Scanning Kelvin-probe, Raman spectroscopy, and scanning tunneling microscopy to provide insights into damage formation during the implantation process. The results and methodologies presented in this work offer valuable insights into the potential of ULE ion implantation as a technique for tailoring the properties and functionalities of 2D materials, with a particular focus on graphene.	de
dc.contributor.coReferee	Wenderoth, Martin PD Dr.
dc.subject.eng	2D materials	de
dc.subject.eng	Graphene	de
dc.subject.eng	Ultra-low energy ion implantation	de
dc.subject.eng	IMINTDYN	de
dc.subject.eng	ion implantation simulations	de
dc.subject.eng	ion source	de
dc.identifier.urn	urn:nbn:de:gbv:7-ediss-14954-1
dc.affiliation.institute	Fakultät für Physik	de
dc.description.embargoed	2023-11-10	de
dc.identifier.ppn	1871222249
dc.notes.confirmationsent	Confirmation sent 2023-11-03T19:45:01	de

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