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Ultra-low Energy Ion Implantation into Graphene

dc.contributor.advisorHofsäss, Hans Christian Prof. Dr.
dc.contributor.authorJunge, Felix
dc.titleUltra-low Energy Ion Implantation into Graphenede
dc.contributor.refereeHofsäss, Hans Christian Prof. Dr.
dc.subject.gokPhysik (PPN621336750)de
dc.description.abstractengThis thesis explores the advancement of ultra-low energy (ULE) ion implantation as a method for precisely doping of graphene, with the aim of tailoring its properties for specific applications. The incorporation of impurity atoms into the crystalline structure of 2D materials is crucial to achieving desired functionalities. Traditional ion implantation techniques have proven inadequate for doping 2D materials, necessitating the development of ULE ion implantation techniques. To address this challenge, a novel ion source that combines plasma and sputtering sources is introduced, thereby expanding the range of implantation elements that can be utilized. Additionally, the utilization of electrostatic masks for lateral selective implantation is discussed. A newly developed simulation program, IMINTDYN, is employed to gain a comprehensive understanding of the implantation process using ultra-low energies. Experimental implantations are thoroughly analyzed using Scanning Kelvin-probe, Raman spectroscopy, and scanning tunneling microscopy to provide insights into damage formation during the implantation process. The results and methodologies presented in this work offer valuable insights into the potential of ULE ion implantation as a technique for tailoring the properties and functionalities of 2D materials, with a particular focus on
dc.contributor.coRefereeWenderoth, Martin PD Dr.
dc.subject.eng2D materialsde
dc.subject.engUltra-low energy ion implantationde
dc.subject.engion implantation simulationsde
dc.subject.engion sourcede
dc.affiliation.instituteFakultät für Physikde
dc.notes.confirmationsentConfirmation sent 2023-11-03T19:45:01de

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