Show simple item record

Inelastic Hydrogen Atom Scattering from Semiconductor Surfaces

dc.contributor.advisorWodtke, Alec M. Prof. Dr.
dc.contributor.authorKrüger, Kerstin
dc.date.accessioned2023-12-11T17:37:23Z
dc.date.available2023-12-18T00:54:52Z
dc.date.issued2023-12-11
dc.identifier.urihttp://resolver.sub.uni-goettingen.de/purl?ediss-11858/15027
dc.identifier.urihttp://dx.doi.org/10.53846/goediss-10247
dc.format.extent137de
dc.language.isoengde
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/
dc.subject.ddc540de
dc.titleInelastic Hydrogen Atom Scattering from Semiconductor Surfacesde
dc.typecumulativeThesisde
dc.contributor.refereeWodtke, Alec M. Prof. Dr.
dc.date.examination2023-06-01de
dc.description.abstractengThe adiabatic approximation is widely applied to describe interactions of atoms and molecules with solid surfaces. It assumes that the electronic system stays in the lowest-energy ground state during the interaction and energy is exclusively distributed via lattice vibrations in the solid. However, in case of light hydrogen atoms, it predicts inefficient energy transfer to the atoms of heavier solids, contradicting experimental findings of inelastic H atom scattering from germanium surfaces. Germanium is an elemental semiconductor and, unlike frequently studied metals, does not have partly-filled electronic states around the Fermi level, but filled and empty states separated by a fundamental energy gap, the band gap. Using H atom beams with incidence translational energies ranging from around 0.4 eV to more than 6 eV, a non-adiabatic scattering channel is observed at high energy-losses, provided that the incidence energy exceeds the value of the surface band gap. This scattering channel is studied at a variety of experimental conditions, including H/D isotope substitution, varying surface temperatures and different surface structures, leading to the conclusion that it involves electronic interband excitations of the semiconductor surface. An electronically adiabatic low energy-loss channel is consistently observed at all scattering conditions.de
dc.contributor.coRefereeSchwarzer, Dirk Prof. Dr.
dc.contributor.thirdRefereeGeil, Burkhard Prof. Dr.
dc.contributor.thirdRefereeJooß, Christian Prof. Dr.
dc.contributor.thirdRefereeObenchain, Daniel Prof. Dr.
dc.contributor.thirdRefereeSuhm, Martin Prof. Dr.
dc.subject.engDynamics at Surfacesde
dc.subject.engInelastic Hydrogen Atom Scatteringde
dc.subject.engRydberg Atom Taggingde
dc.subject.engEnergy Transferde
dc.subject.engSemiconductor Surfacesde
dc.identifier.urnurn:nbn:de:gbv:7-ediss-15027-2
dc.affiliation.instituteFakultät für Chemiede
dc.subject.gokfullChemie  (PPN62138352X)de
dc.description.embargoed2023-12-18de
dc.identifier.ppn1873100361
dc.notes.confirmationsentConfirmation sent 2023-12-11T19:45:02de


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record