Ultrafast exciton dynamics in moiré heterostructures
by Jan Philipp Bange
Date of Examination:2025-02-14
Date of issue:2025-08-05
Advisor:Prof. Dr. Stefan Mathias
Referee:Prof. Dr. Stefan Mathias
Referee:Prof. Dr. Claus Ropers
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Abstract
English
The optoelectronic properties of two-dimensional semiconductors are defined by two-particle correlated exciton states formed via the Coulomb interaction between single-particle holes and electrons. After excitation with light, excitons in transition metal dichalcogenide monolayers and heterostructures undergo scattering from optically bright states to momentum-indirect dark states. The latter are not directly accessible in all-optical spectroscopies. In this thesis, the ultrafast dynamics of bright and dark states is probed by means of time-resolved momentum microscopy - a new variant of time- and angle-resolved photoemission spectroscopy. A comparison between experiment and microscopic modelling reveals exciton-phonon scattering as the underlying mechanism of momentum-indirect dark exciton formation in WSe2 monolayers. Furthermore, the formation of interlayer excitons (ILX) in a staggered band aligned WSe2/MoS2 bilayer occurs via a cascaded process involving hybridized states, in which either the electron or the hole component transfers across the interface. Notably, the momentum resolved experiments facilitate the direct analysis of a hallmark of the moiré superlattice, visualizing the interaction of excitons with the emerging moiré potential.
Keywords: momentum microscopy; transition metal dichalcogenides; semiconductor heterostructures; moiré superlattice; ultrafast exciton dynamics; time- and angle-resolved photoemission spectroscopy; interlayer exciton; hybrid exciton; in-situ electric field effect gating; exciton-phonon scattering; van der Waals materials