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dc.contributor.advisor Rizzi, Angela Prof. Dr.
dc.contributor.author Oppo, Carla Ivana
dc.date.accessioned 2017-02-06T10:52:13Z
dc.date.available 2017-02-06T10:52:13Z
dc.date.issued 2017-02-06
dc.identifier.uri http://hdl.handle.net/11858/00-1735-0000-002B-7D31-B
dc.language.iso eng de
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/4.0/
dc.subject.ddc 530 de
dc.title Development of InGaN/GaN nanostructures de
dc.type doctoralThesis de
dc.contributor.referee Rizzi, Angela Prof. Dr.
dc.date.examination 2017-01-31
dc.subject.gok Physik (PPN621336750) de
dc.description.abstracteng In this work, the mechanisms regulating the selective area growth (SAG) of GaN-based nanostructures have been investigated, under different growth conditions, with the aim of improving the control over the growth of InGaN/GaN heterostructures.  First of all, starting from the knowledge already acquired in the group concerning the growth of GaN arrays on Molybdenum mask, the morphological evolution of GaN SAG nanostructures, grown on Mo and Ti mask, has been further investigated, as a function of the nominal fluxes ratio, as well as as a function of the growth time and the lithographed nanohole dimensions.  Once the mechanisms behind the SAG of GaN nanostructures have been better understood, the additional growth of epitaxial InGaN on the semipolar tip of the SAG nanostructures has been investigated and different InGaN growth approaches have been considered to this scope.  Finally, the attention has been turned to the disordered self-induced nanocolumns, accidentally grown on the Mo mask during the SAG of InGaN/GaN nanostructures.  Due to the need of high spatial resolution and high chemical sensitivity analytical techniques, the characterization of InGaN/GaN nanostructures has been performed by means of different analytical techniques, in particular: SEM chatodoluminescence (SEM-CL) analysis, nano X-ray fluorescence (nano-XRF) and diffraction (nano-XRD), high-angle annular dark-field scanning trans- mission electron microscopy (HAADF-STEM) and high-resolution transmission electron microscopy (HR-TEM). de
dc.contributor.coReferee Hofsäss, Hans Christian Prof. Dr.
dc.subject.eng molecular beam epitaxy de
dc.subject.eng InGaN/GaN de
dc.subject.eng nanocolumns de
dc.subject.eng selective area growth de
dc.subject.eng polarity de
dc.subject.eng semipolar de
dc.subject.eng x-ray fluorescence de
dc.subject.eng x-ray diffraction de
dc.subject.eng cathodoluminescence de
dc.identifier.urn urn:nbn:de:gbv:7-11858/00-1735-0000-002B-7D31-B-8
dc.affiliation.institute Fakultät für Physik de
dc.identifier.ppn 879153008

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