Browsing Fakultät für Physik (inkl. GAUSS) by Advisor "Hofsäss, Hans Christian Prof. Dr."
Now showing items 1-14 of 14
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Ultra-low Energy Ion Implantation into Graphene
(2023-11-03)This thesis explores the advancement of ultra-low energy (ULE) ion implantation as a method for precisely doping of graphene, with the aim of tailoring its properties for specific applications. The incorporation of impurity ... -
Proton Beam Writing
(2022-12-16)Proton beam writing (PBW) is a mask-less 3D structuring method that uses a focused, relatively high energy Proton beam, followed by an etching step to create free standing 2D and 3D structures in a large variety of target ... -
Modification of monolayer-thick semiconductors by ultra-low energy ion implantation
(2022-03-08)In this thesis, ultra-low energy (ULE) ion implantation is used to modify 2D materials such as graphene and transition metal dichalcogenides (TMDs). The existing implantation system is improved in two respects. By ... -
Ionenstrahlinduzierte selbst-organisierte Musterbildung auf einfachen Oberflächen Theorie und Experiment
(2018-05-30)In the thesis at hand, ripple pattern formation on amorphous carbon and Si surfaces has been investigated at room temperature during low energy Ne and Ar ion irradiation as a function of the ion incidence angle. Monte ... -
A novel approach of immittance-spectra analysis and how it resolves a decade-old deviation of the Frenkel-Poole model
(2017-02-23)Immittance (i.e. a generalisation of all quantities containing identical information as e.g. the impedance) spectroscopy is a well-established and versatile method with a broad range of applications in a wide variety of ... -
Measurement of the stopping power of water for carbon ions in the energy range of 1 MeV - 6 MeV using the inverted Doppler–shift attenuation method
(2016-12-08)Cancer therapy using carbon ions has gained increasing interest in the last decade due to its advantageous dose distributions. For the dosimetry and treatment planning, the accurate knowledge of the stopping power of water ... -
Next-Generation Perturbed Angular Correlation Spectroscopy
(2014-06-12)Time differential perturbed angular correlation (TDPAC) spectroscopy is a nuclear solid-state physics method with unique advantages: Due to the penetrating power of gamma radiation used as information carrier, it allows ... -
Swift heavy ion irradiation of semiconducting materials - defect production, phase transformation and annealing
(2010-09-02)Swift heavy ion irradiation causes several effects on the target material. This doctoral thesis is about two effects, namely track formation and ion beam induced annealing.Tetrahedral ... -
Growth and Characterization of Carbon-Metal-Nanocomposite-Thin-Films and Self-Organized Layer Growth
(2009-06-09)The simultaneous deposition of carbon and metal ions by mass-selected ion beam deposition leads to the formation of carbon-metal-nanocomposites. The morphology of the resulting films depends ... -
Structural and electronic properties of swift heavy ion tracks in amorphous carbon
(2007-07-04)Ion irradiation effects in the electronic energy loss regime are discussed for various carbon materials. The formation of tracks in irradiated amorphous carbon is analyzed experimentally ... -
Parallele Datenakquisition zur Beschleunigung Diffusionsgewichteter Kernspintomographie mit Stimulierten Echos
(2007-04-18)Magnetic resonance imaging (MRI) experiments can be sensitised to the erratic thermal displacement of (water) molecules by the application of magnetic field gradients. The associated signal ... -
Self-Organized Formation of Metal-Carbon Nanostructures by Hyperthermal Ion Deposition
(2006-05-23)The quasi-simultaneous deposition of mass-selected hyperthermal carbon and metal ions results in a variety of interesting film morphologies, depending on the metal used and the deposition ... -
Phase formation processes in the synthesis of boron nitride thin films
(2005-11-02)As a diamond-like material, cubic boron nitride (c-BN) exhibits extraordinary mechanical, electrical, chemical, and thermal properties, making it a promising material for corrosion- and ... -
Lanthanide Doped Wide Band Gap Semiconductors: Intra-4f Luminescence and Lattice Location Studies
(2004-03-03)The doping of semiconductors with lanthanides is a promising way to realize light emitters, their luminescence arising from radiative electron transitions within the 4f shell of the triply ...