Electrical characterization of Metal - Amorphous Semiconductor - Semiconductor diodes – a general conduction model

by Marc Brötzmann
Doctoral thesis
Date of Examination:2013-01-28
Date of issue:2013-05-14
Advisor:Prof. Dr. Hans Hofsäss
Referee:Prof. Dr. Hans Hofsäss
Referee:Prof. Dr. Michael Seibt
Persistent Address: http://dx.doi.org/10.53846/goediss-3846

 

 

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Abstract

English

Metal – Amorphous Semiconductor – Semiconductor heterostructures consist of various single-crystalline semiconducting substrates such as silicon (Si), silicon carbide in 6H configuration (6H-SiC) and zinc oxide (ZnO) covered with a thin-film of an amorphous or highly disordered material such as tetrahedral amorphous carbon (ta-C) and so called turbostratic boron nitride (t-BN) as well as an evaporated metal contact on top. All of these heterostructures form heterojunction diodes and exhibit pronounced rectifying behavior, low saturation and low parasitic currents as well as high photosensitivity. The electrical properties of all grown heterostructures were investigated using temperature dependent current-voltage (I-V) measurements resulting in the development of a general, temperature dependent conduction model for all metal-amorphous semiconductor-semiconductor (MASS) heterojunction diodes including a comprehensive study of dominating conduction mechanism inside amorphous thin-films. In addition, the effect of different amorphous structures on the electrical properties of several heterojunction systems in terms of defect and interface configuration was analyzed on the basis of detailed structural characterizations of the corresponding heterostructures using cross-sectional high resolution transmission electron microscopy measurements (HRTEM). Furthermore, the photosensitivity as well as the AC properties of the MASS heterojunction systems were investigated in order to verify or even extend the developed conduction models.
Keywords: heterojunction diodes; electrical characterization; transmission electron microscopy; impedance spectroscopy; MASS diodes; High-field and nonlinear effects; metal-semiconductor contacts; amorphous and disordered thin-films; Schottky contacts
 
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