Electrical characterization of Metal - Amorphous Semiconductor - Semiconductor diodes – a general conduction model

Brötzmann, Marc

dc.contributor.advisor	Hofsäss, Hans Prof. Dr.	de
dc.contributor.author	Brötzmann, Marc	de
dc.date.accessioned	2013-05-14T08:46:26Z	de
dc.date.available	2013-05-14T08:46:26Z	de
dc.date.issued	2013-05-14	de
dc.identifier.uri	http://hdl.handle.net/11858/00-1735-0000-0019-E60D-D	de
dc.identifier.uri	http://dx.doi.org/10.53846/goediss-3846
dc.identifier.uri	http://dx.doi.org/10.53846/goediss-3846
dc.identifier.uri	http://dx.doi.org/10.53846/goediss-3846
dc.language.iso	eng	de
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject.ddc	530	de
dc.title	Electrical characterization of Metal - Amorphous Semiconductor - Semiconductor diodes – a general conduction model	de
dc.type	doctoralThesis	de
dc.contributor.referee	Hofsäss, Hans Prof. Dr.	de
dc.date.examination	2013-01-28	de
dc.subject.gok	Physik (PPN621336750)	de
dc.description.abstracteng	Metal – Amorphous Semiconductor – Semiconductor heterostructures consist of various single-crystalline semiconducting substrates such as silicon (Si), silicon carbide in 6H configuration (6H-SiC) and zinc oxide (ZnO) covered with a thin-film of an amorphous or highly disordered material such as tetrahedral amorphous carbon (ta-C) and so called turbostratic boron nitride (t-BN) as well as an evaporated metal contact on top. All of these heterostructures form heterojunction diodes and exhibit pronounced rectifying behavior, low saturation and low parasitic currents as well as high photosensitivity. The electrical properties of all grown heterostructures were investigated using temperature dependent current-voltage (I-V) measurements resulting in the development of a general, temperature dependent conduction model for all metal-amorphous semiconductor-semiconductor (MASS) heterojunction diodes including a comprehensive study of dominating conduction mechanism inside amorphous thin-films. In addition, the effect of different amorphous structures on the electrical properties of several heterojunction systems in terms of defect and interface configuration was analyzed on the basis of detailed structural characterizations of the corresponding heterostructures using cross-sectional high resolution transmission electron microscopy measurements (HRTEM). Furthermore, the photosensitivity as well as the AC properties of the MASS heterojunction systems were investigated in order to verify or even extend the developed conduction models.	de
dc.contributor.coReferee	Seibt, Michael Prof. Dr.	de
dc.subject.eng	heterojunction diodes	de
dc.subject.eng	electrical characterization	de
dc.subject.eng	transmission electron microscopy	de
dc.subject.eng	impedance spectroscopy	de
dc.subject.eng	MASS diodes	de
dc.subject.eng	High-field and nonlinear effects	de
dc.subject.eng	metal-semiconductor contacts	de
dc.subject.eng	amorphous and disordered thin-films	de
dc.subject.eng	Schottky contacts	de
dc.identifier.urn	urn:nbn:de:gbv:7-11858/00-1735-0000-0019-E60D-D-2	de
dc.affiliation.institute	Fakultät für Physik	de
dc.identifier.ppn	746434820	de

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